VERTICAL GATE TRANSISTOR, ITS FABRICATION AND OPERATING METHOD AND IC

摘要

PURPOSE: A vertical gate transistor, its fabrication and operating method and IC are provided to form a vertical gate transistor structure that prevents slow device speed. CONSTITUTION: In the vertical gate transistor, A first source-drain region(110) is disposed in a semiconductor wafer substrate. A conductive layer(120) is adjacent to the first source-drain region for the electric connection with the first source drain region. A second source drain region(650) is disposed on the first source drain region. A conductive channel(605) is extended from the first source drain region to the second source drain region(650).