| 摘要 |
PURPOSE: To provide a transistor type ferroelectric nonvolatile memory element, having an MFMIS(metal-ferroelectric-metal-insulator-semiconductor) structure, which can be integrated to high density. CONSTITUTION: This MFMIS transistor has a structure, where an MFM(metal- ferroelectric-metal) structure and an MIS(metal-insulator-semiconductor) structure are stacked vertically inside almost the same area, and the lower MIS structure has a means for increasing an effective area of an MIS capacitance. The means for increasing an effective area of the capacitance is a trench inside a semiconductor substrate, ineqularities inside an MIS structure, an MIM(metal-insulator- metal) structure or the like. |
