发明名称 SLICING METHOD OF SEMICONDUCTOR CRYSTAL INGOT
摘要 PURPOSE: A slicing method of a semiconductor crystal ingot is provided to prevent the damage of a wafer between blocks or a damage of a wafer of both end portions of the blocks by inserting a guide beam between ingot blocks. CONSTITUTION: A cutting process of ingot blocks(1) is performed by using a wire saw machine. The ingot blocks of a predetermined unit length are formed by the cutting process. A grinding process for outer circumferences of the cut ingot blocks is performed. An orientation flat(1a) is processed to represent an orientation of the ingot block(1). The ingot block(1) of short length is adhered to a groove(2a) of a support plate(2) according to a predetermined interval by using an epoxy adhesive. The support plate(2) is fixed to a mounting block(7). A guide block(3a) is inserted between the ingot blocks(1). The guide blocks(3b,3c) are adhered to both end portions of the ingot blocks(1). A lower surface of the guide blocks(3a-3c) corresponds to the groove(2a) of the support plate(2). An upper surface of the guide blocks(3a-3c) is formed with a cut side. A slicing process for the ingot blocks(1) is performed.
申请公布号 KR20010091383(A) 申请公布日期 2001.10.23
申请号 KR20000013026 申请日期 2000.03.15
申请人 NEOSEMITECH INC. 发明人 KANG, UNG SIK
分类号 H01L21/301;(IPC1-7):H01L21/301 主分类号 H01L21/301
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