发明名称 |
METHOD FOR MANUFACTURING SURFACE ACOUSTIC WAVE DEVICE |
摘要 |
PURPOSE: To provide a manufacturing method by which the short-circuit of an electrode hardly occurs and a piezoelectric substrate in the electrode forming area of a surface acoustic wave element formed later is hardly deteriorated for constituting the plural surface acoustic wave elements constituted on the same piezoelectric substrate by using electrodes different in thickness. CONSTITUTION: In the manufacturing method of a surface acoustic wave device, IDT electrodes 1a and wiring electrodes 1b for short-circuiting the interdigital electrodes of the IDT electrodes are formed on a piezoelectric substrate 3 by dry etching. An area where the electrode structure of a second surface acoustic wave filter element 2 is formed is protected by a conductive film 2b during a dry etching process and a second resist 6 is given after the IDT electrodes 1a and the wiring electrodes 1b are formed. The resist is heated and the IDT electrodes 2a of the second acoustic surface wave filter element 2 are formed. Then, the short-circuiting wiring electrodes 1b are cut. |
申请公布号 |
KR20010091981(A) |
申请公布日期 |
2001.10.23 |
申请号 |
KR20010012622 |
申请日期 |
2001.03.12 |
申请人 |
MURATA MANUFACTURING CO., LTD. |
发明人 |
IKADA KATSUHIRO;SAKAGUCHI KENJI;TAKAMIYA MIKI |
分类号 |
H03H3/08;H03H9/145;(IPC1-7):H03H3/08 |
主分类号 |
H03H3/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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