发明名称 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
摘要 PURPOSE: A substrate processing method and a substrate processing apparatus are provided to capable of uniformly performing predetermined processing with a solution on a substrate, make each line width be uniform in developing processing and prevent defects from occurring during the coating of the developing solution. CONSTITUTION: On the occasion of developing processing, a mixed solution produced by stirring a developing solution and a solution with a specific gravity smaller than the developing solution is supplied to the front surface of a substrate and left as it is for a fixed period of time. After the mixed solution is separated into two layers of which the lower layer is the developing solution and the upper layer is the solution, developing progresses all at once in the entire surface of the substrate. Hence, time difference in start time of developing does not occur in the surface of the substrate, thereby enabling uniform developing and an improvement in line width uniformity of a resist pattern film in the surface of the substrate.
申请公布号 KR20010091978(A) 申请公布日期 2001.10.23
申请号 KR20010012577 申请日期 2001.03.12
申请人 TOKYO ELECTRON LIMITED 发明人 ORII TAKEHIKO;TOSHIMA TAKAYUKI
分类号 H01L21/027;G03F7/30;G03F7/32;(IPC1-7):H01L21/027 主分类号 H01L21/027
代理机构 代理人
主权项
地址