发明名称 THIN-FILM SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME
摘要 PURPOSE: To provide substrates suitable for the manufacture and product of a thin-film semiconductor device. CONSTITUTION: A substrate 20 for manufacture with characteristics, capable of resisting of a process for forming a thin-film resistor 3 and a substrate 1 for the product with characteristics suitable for directly loading the thin-film transistor 3 are prepared in a preparation process. Next, the substrate 20 for manufacture is adhered to the substrate 1 for the product, so that the substrate 1 for the product can be supported from the back side in an adhering process. Then, at least the thin-film transistor 3 is formed on the surface of the substrate 1 for the product in a state that this is reinforced by the substrate 20 for manufactured. At least, the substrate 20 for manufacturing which is already used is isolated from the substrate 1 for the product in an isolating process.
申请公布号 KR20010091992(A) 申请公布日期 2001.10.23
申请号 KR20010012703 申请日期 2001.03.12
申请人 SONY CORPORATION 发明人 HAYASHI HISAO
分类号 G02F1/136;G02F1/1368;G09F9/30;H01L21/00;H01L21/02;H01L21/30;H01L21/336;H01L27/12;H01L27/32;H01L29/786;H01L31/036;H01L35/24;H01L51/00;H01L51/56;(IPC1-7):H01L29/786 主分类号 G02F1/136
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