摘要 |
The present invention relates to a nitrogen oxide detecting element. Although there has been a demand for effecting detection of a nitrogen oxide by using a semiconductor type gas sensor, no semiconductor type sensors have existed which can detect the nitrogen oxide with good selectivity against other interfering gases (CO, H2) for an extended period of time with good durability. Then, by causing a gas detecting portion to include an oxide containing more than a predetermined amount of Bi and maintaining this gas detecting portion at a temperature range where its electron-conductivity is exhibited, it has become possible to detect the nitrogen oxide.
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