| 摘要 |
A method is provided for manufacturing masks of the EAPSM type used to produce integrated circuits. The method includes forming a shifter layer on a quartz layer, forming a chromium layer on the shifter layer, and forming a resist layer on the chromium layer. The resist layer is partially removed using a first exposure to a light source. The chromium layer is etched to form a plurality of openings, and the resist layer is removed. The method further includes etching the shifter layer at the plurality of openings. An additional layer of resist is formed on portions of the chromium layer, and exposed portions of the chromium layer are removed using a second exposure to the light source with a chromium removal window having dimensions smaller than, or equal to, dimensions of a step of a stepper unit used to transfer active devices of the EAPSM mask. The additional layer of resist is then removed.
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