| 摘要 |
PROBLEM TO BE SOLVED: To provide a composition capable of forming a silica-based film as an interlaminar insulation film material in semiconductor elements and the like, excellent in the PCT(pressure cooker test) resistance of dielectric constant characteristics, crack resistance and CMP(chemical mechanical polishing) resistance. SOLUTION: This composition for film formation contains (A) a hydrolysis condensate prepared by condensation reaction between a basic compound <=10 in pKa and at least one silane compound selected from the group consisting of compounds of the respective general formulas (1): Ra(Si)(OR1)4-a, (2): Si(OR2)4, and (3): R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6c (wherein R is H, F or a univalent organic group; R1 to R6 are each a univalent organic group; R7 is O, phenylene group or (CH2)n; (a) is an integer of 1 or 2; b and c are each 0-2; d is 0 or 1; and n is an integer of 1 to 6) in the presence of water, and (B) an organic solvent.
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