发明名称 METHOD OF FORMING METAL OXIDE THIN FILM
摘要 PROBLEM TO BE SOLVED: To simply and efficiently obtain a transparent metal oxide thin film low in cloudiness. SOLUTION: In the formation of the metal oxide thin film by a liquid deposition method, a substrate is cleaned (S1) at first, a dispersion of aluminum oxide is applied on the surface (S2) and dried at 80-300 deg.C (S3). The coating film of a metal oxide is formed on the aluminum oxide coating film (S4).
申请公布号 JP2001294408(A) 申请公布日期 2001.10.23
申请号 JP20000106427 申请日期 2000.04.07
申请人 STANLEY ELECTRIC CO LTD 发明人 SANO MANAMI;KUMEI MASAMI;AJIKI SHUICHI
分类号 G02B1/10;C01B13/14;C01B33/12;C01G23/053;C01G49/02 主分类号 G02B1/10
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