发明名称 |
METHOD OF FORMING METAL OXIDE THIN FILM |
摘要 |
PROBLEM TO BE SOLVED: To simply and efficiently obtain a transparent metal oxide thin film low in cloudiness. SOLUTION: In the formation of the metal oxide thin film by a liquid deposition method, a substrate is cleaned (S1) at first, a dispersion of aluminum oxide is applied on the surface (S2) and dried at 80-300 deg.C (S3). The coating film of a metal oxide is formed on the aluminum oxide coating film (S4).
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申请公布号 |
JP2001294408(A) |
申请公布日期 |
2001.10.23 |
申请号 |
JP20000106427 |
申请日期 |
2000.04.07 |
申请人 |
STANLEY ELECTRIC CO LTD |
发明人 |
SANO MANAMI;KUMEI MASAMI;AJIKI SHUICHI |
分类号 |
G02B1/10;C01B13/14;C01B33/12;C01G23/053;C01G49/02 |
主分类号 |
G02B1/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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