METHOD FOR FORMING CONDUCTIVE REGION BY THREE-DIMENSIONAL ION IMPLANTATION

摘要

PURPOSE: A method for forming a conductive region by three-dimensional ion implantation is provided to form a conductive region by implanting accelerated ions on a surface of an object formed as a high molecular compound. CONSTITUTION: An object for forming a conductive region is inputted into an internal chamber of a process chamber(S2). A gas supply source supplies a reaction gas to a space between an external chamber and the internal chamber. A magnetic field is generated in the space between the internal chamber and the external chamber. Cold plasma is generated by the reaction gas and the magnetic field(S4). A high pulse power source applies a high voltage to the internal chamber(S6). The conductive region is formed by implanting the first ions into the object(S8). The object is rotated as much as 180 degrees by using a holder jig(S10). The second ions are implanted on a whole surface of the object(S12). The object is discharged to the outside(S14).