| 摘要 |
A film formation method which comprises the steps of forming a high melting metal film on a substrate to cover an insulating pattern formed on the substrate therewith, and forming on the surface of the high melting metal film a high melting metal nitride film or a high melting oxide nitride film. The high melting metal film in the first step is formed by a chemical vapor deposition process, after which the high melting metal nitride or high melting metal oxide nitride film is continuously formed by the chemical vapor deposition process. During the CVD processes in the first and second steps, the substrate may be applied with an RF bias.
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