| 摘要 |
The present invention provides an apparatus for deposition of thin films on a plurality of wafers through an atomic layer epitaxial process within a reaction chamber. The apparatus has a susceptor, provided within the reaction chamber to hold the wafers and has of a plurality of wafer stations. A plurality of wafer seating units are provided in the wafer stations, and seat the wafers in the wafer stations. A gas ejecting unit is provided within the reaction chamber, and ejects reaction gases onto the reaction surfaces of the wafers. A gas feeding unit feeds the reaction gases to the gas ejecting unit at predetermined time intervals so as to allow the gas ejecting unit to alternately eject the reaction gases through each of two gas outlets into the reaction chamber. A susceptor drive unit rotates the susceptor at a predetermined velocity and vertically moves the susceptor to an upper optimal reaction position close to the ceiling of the reaction chamber. A vacuum pumping unit maintains pressure of the reaction gases within the reaction chamber, and discharges the reaction gases to the outside of the chamber. A wafer heating is positioned under the susceptor within the chamber, and heats the wafers on the susceptor within the chamber, and heats the wafers on the susceptor to a predetermined temperature. A plurality of chamber heaters are regularly set within the reaction chamber in a radial direction, and heat the interior.
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