SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A semiconductor device is provided to integrate a memory and a transistor for controlling the memory, by forming a ferroelectric field effect transistor(FET) and a metal-insulator field effect transistor(MISFET) on a common semiconductor substrate so that the ferroelectric FET is used as a memory cell and the MISFET is used as a transistor for driving the memory cell. CONSTITUTION: The MISFET has a gate insulation layer, a gate electrode and a source/drain region, formed on the semiconductor substrate. The ferroelectric FET has a ferroelectric layer(23), a controlled gate electrode(24) formed on the ferroelectric layer and a source/drain region, formed on the semiconductor substrate.