METHOD FOR FORMING CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a contact hole of a semiconductor device is provided to improve an etching reaction by reducing an aspect ratio of the gap area between gate patterns. CONSTITUTION: A plurality of gate pattern(140) is formed on a substrate(100). An insulating layer(160) for spacer is formed on a whole surface of the structure. An aspect ratio of the gap area between the gate patterns(140) is reduced by etching back the insulating layer(160). A spacer(160a) is formed on a sidewall of the gate pattern(140) of a peripheral circuit region by etching the remaining insulating layer(160). An etch stop layer(180) is formed on the whole surface of the structure. An interlayer dielectric(200) is formed on the etch stop layer(180). A hole is formed to expose the etch stop layer(180) between the gate patterns(140) of a cell array region by patterning the interlayer dielectric(200) of the cell array region. A self-aligned contact hole(220a) is formed to expose the substrate(100) between the gate patterns(140) of the cell array region by etching the exposed etch stop layer(180) and the etched insulating layer(160).