PLASMA SPRAY DEVICE FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

摘要

PURPOSE: A plasma spray device for manufacturing a semiconductor device and a method for manufacturing a semiconductor device using the same are provided to heat easily a substrate by obtaining a high temperature within a short time. CONSTITUTION: A gas for forming plasma is injected into a main pipe(308). A multitude of branch pipe(310) is branched from the main pipe(308). The branch pipes(310) is surrounded by a supplementary portion(205) including a waveguide resonator and a magnetron. An inner electrode is surrounded by an outer electrode(212). A high direct voltage is applied to the inner electrode and the outer electrode(212) by a power source of a plasma torch. Plasma frames(218) of high temperature are generated from each plasma torch. A surface of a substrate(306) loaded on a susceptor(304) is covered with the generated plasma frames(218). The plasma frames(218) of the same intensity are applied to the substrate(306). The susceptor(306) is supported by a supporter(307). A heater(305) is mounted in the susceptor(306). A supply plate(312) is used for supplying a reaction gas.