| 摘要 |
A bond pad structure for use in wire bonding application during the packaging operation of semiconductor devices which contains a bond frame structure for holding the bond pad in place to prevent bond pad peel-off problem. The bond pad structure is a laminated structure containing a top dielectric layer, a metal bond pad layer, a middle dielectric layer, and an underlying layer formed above a wafer surface. The bond frame structure, which is formed in a spaced apart relationship from the metal bond pad layer contains a plurality of island elements formed on top of the middle dielectric layer and an interconnected frame element formed on top of the top dielectric layer. The frame element contains a portion which overlaps with a portion of the metal bond pad layer, so as to exert a downward force to prevent the metal bond pad layer from peeling off. Each of the island elements is respectively connected to the underlying layer and the frame element by one or a plurality of hole-fills, which can contain an appropriate hole-material such as tungsten plus or can be filled with the same material constituting the layer overlaying them. The underlying layer can be a metal layer, a semiconductor layer such as a polysilicon layer, or any material layer which has good adhesion with the hole fill material.
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