发明名称 |
Low temperature polysilicon manufacturing process |
摘要 |
A low temperature polysilicon manufacturing method. A system for performing physical vapor deposition is used to form an amorphous silicon film with micro-crystals therein. The amorphous silicon film is annealed at a temperature between 400° C. to 500° C. for about 6 to 16 hours to form a polysilicon film. The polysilicon film can be further processed into a low-temperature polysilicon film transistor.
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申请公布号 |
US6306697(B1) |
申请公布日期 |
2001.10.23 |
申请号 |
US20010755579 |
申请日期 |
2001.01.05 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
CHANG TING-CHANG;PENG DU-ZEN;CHANG CHUN-YEN |
分类号 |
H01L21/336;H01L29/786;(IPC1-7):H01L21/84 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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