METHOD FOR FORMING CONTACT PLUG OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A contact plug formation is provided to prevent an etching failure of the contact plug and to improve a stability of stress by forming an etch resisting spacer at inner sidewalls of a contact hole. CONSTITUTION: An interlayer dielectric(110) is formed on the semiconductor substrate(100). A contact hole is formed by selectively etching the interlayer dielectric(110). An etch resisting spacer(120a) is formed at inner sidewalls of the contact hole. A contact plug(134a) is formed by filling a conductive layer into the contact hole. The etch resisting spacer(120a) has a low etching selectivity compared to the contact plug(134a).