| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of growing a high quality gallium nitride-based compound semiconductor crystal suitable as a blue light-emitting material. SOLUTION: In the method of growing the gallium nitride-based compound semiconductor crystal on a single crystal substrate, M1(1-x)M2xY (M1 and M2 are each a different metal element; Y is one or more selected from carbon, nitrogen, boron or oxygen; and x is >0 and <1), having a rock salt structure, preferably having (111) face, especially preferably having lattice spacings of (111) faces of M1Y and M2Y such that the lattice spacing of one of the (111) faces of M1Y and M2Y is larger than the lattice spacing of (0001) face of the gallium nitride-based compound semiconductor and the other lattice spacing is smaller than that of the gallium nitride-based compound semiconductor, that is to say, they show reverse signs to each other in lattice mismatching ratio, is used as the single crystal substrate mentioned above. |
