发明名称 |
Complementary MOS semiconductor device |
摘要 |
A complementary MOS semiconductor device comprising: a complementary MOS logic circuit having a plurality of field effect transistors; a first wiring and a second wiring as a source for supplying therethrough a power source voltage to the complementary MOS logic circuit; a first power supply circuit for controlling the supply of the power source voltage from said first wiring to said complementary MOS logic circuit; a second power supply circuit for controlling the supply of the power source voltage from said second wiring to said complementary MOS logic circuit; and a third power supply circuit for controlling the operation of said first power supply circuit, wherein said third power supply circuit includes field effect transistors each having a gate insulating film with 2.5 nm or more thickness.
|
申请公布号 |
US6307234(B1) |
申请公布日期 |
2001.10.23 |
申请号 |
US19980190010 |
申请日期 |
1998.11.12 |
申请人 |
NEC CORPORATION |
发明人 |
ITO HIROSHI;SASAKI MAKOTO |
分类号 |
H01L29/78;G11C11/407;H01L21/8238;H01L27/092;H03K17/00;H03K17/687;H03K19/0948;(IPC1-7):H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|