| 摘要 |
PURPOSE: A semiconductor memory device, and a redundancy circuit and method thereof are provided, which can improve a redundancy efficiency by performing a redundancy operation in a unit of fixed number of memory cell array blocks whose fail types are equal. CONSTITUTION: The redundancy circuit comprises a memory cell array bank comprising m memory cell array blocks(BL1,BL2,BL3,...,BLm), a selection circuit(50), a control signal generation circuit(52) and l redundancy circuits(100-1,...,100-l) comprising i defective redundant enable signal generation circuits(54-1,54-2,...,54-i). The l defective column selection signal lines of n column selection signal lines(CSL1-CSLn) of each memory cell array block can be substituted with l redundant column selection signal lines(RCSL1-RCSLl). That is, each of l redundancy circuits(100-1,...,100-l) is connected to each of l redundant column selection signal lines.
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