METHOD FOR MANUFACTURING SELF-ALIGNED CONTACT HOLES

摘要

PURPOSE: A fabrication method of an SAC(Self-Aligned Contact) holes is provided to improve an overlay margin by using a self-aligned contact formation method. CONSTITUTION: A plurality of gate patterns(300) are formed on a substrate(100). First insulating patterns(400) are coated in spaces between the gate patterns(300). A first contact hole is formed to expose the substrate by self-aligned etching the first insulating patterns. Spacers(600) are formed at both sidewalls of the first contact hole. After forming a first plug(710) filled into the first contact hole, the first plug(710) and the gate patterns(300) are partially etch backed, so that the spacers(600) are protruded. Then, a second plug(730) is formed by filling into the spaces between the protruded spacers. Capping protection patterns(650) are formed on the exposed gate patterns.