| 摘要 |
PURPOSE: A method for fabricating a semiconductor device of a multilayered interconnection structure is provided to perform a fine processing in forming a contact hole and a groove, wherein one of the contact hole or groove is possible in a conventional dual damascene structure. CONSTITUTION: An interconnection is selectively formed on a semiconductor substrate. The first interlayer dielectric(12) is formed. The first anti-reflective coating(ARC)(13) and the first resist layer(14) are sequentially formed on the first interlayer dielectric. The first resist layer is patterned. The first ARC and the first interlayer dielectric are removed to form the contact hole(15) exposing the surface of the interconnection by using the patterned first resist layer as a mask. The first resist layer is removed. The second ARC is formed to fill the at least lower surface of the contact hole. The second resist layer is formed and is patterned to leave the second resist layer on the contact hole. The second ARC is removed to expose the surface of the first interlayer dielectric by using the patterned second resist layer. The second interlayer dielectric is formed to cover the patterned second resist layer and the second ARC. The second interlayer dielectric is removed. The patterned second resist layer and the second ARC are removed to form the groove in the second interlayer dielectric.
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