| 摘要 |
PROBLEM TO BE SOLVED: To spread depletion layers to the peripheral sides of FET elements excellently, and to increase the breakdown voltage in the peripheries of the elements, by forming breakdown voltage increasing regions of the same depth as the base regions on the peripheral sides of the base regions, and forming auxiliary regions shallower than the breakdown voltage increasing regions. SOLUTION: Since each base region 3 is formed into the shape of a pillar in a drift region 1, and the specific resistance of the drift region 1 is set to a relatively small value, the resistance of a current path of the drift region 1 is reduced, and reduction of operating resistance is achieved at a high level. Besides, concerning the breakdown voltage of each element forming region, a sufficiently high breakdown voltage is obtained, since the intervals between base regions 3 are filled with depletion layers 16. Besides, concerning the breakdown voltage on the peripheral side of each element, a sufficiently high breakdown voltage is obtained, since a depletion layer 16 can be spread smoothly so as to lighten field concentration to the peripheral side of the element excellently by a breakdown voltage increasing region 12 and an auxiliary region 13. |
