| 摘要 |
PROBLEM TO BE SOLVED: To prevent a short-circuit between a bit line and a capacitor lower electrode. SOLUTION: A plug region 106 for electrically connecting a semiconductor substrate 101 is provided between word lines, and a bit line 113 is provided on between the plug regions via a first insulation film and a second insulation film having a small etching rate with respect to the first insulation film, and a capacitor electrode is provided between bit lines via a third insulation film having the small etching rate with respect to the first insulation film, to be connected to the plug regions. |
