| 摘要 |
PROBLEM TO BE SOLVED: To decrease an area of a DRAM memory cell. SOLUTION: A memory cell 51 has at least a memory capacitor 52 and a selection transistor 12 which are intrinsically formed in a region of a rectangular cell region 59. The rectangular cell region 59 has a larger range in a longitudinal direction L than in a widthwise direction B. It is wired to a periphery of a cell via word lines 56, 57 and a bit line 55, or can be wired thereto. The word lines 56, 57 and the bit line 55 are transmitted onto the memory cell 51 and are directed at least intrinsically perpendicular to each other. |
