| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory cell having a trench and an epitaxial growing layer, taking into consideration an adjustment allowable error which enhances a manufacture process. SOLUTION: An insulation trench 15 is disposed so as to enclose a memory cell 1 and an adjacent memory cell 16, doped active region 17 between the memory cell 1 and the adjacent memory cell 16 is formed, and a second dielectric layer 12 having an inside opening 13 is disposed above an epitaxial grown layer 11 in the upper region 6 of a trench 3. |
