METHOD FOR FORMING SELF-ALIGNED CONTACT PAD IN DAMASCENE GATE PROCESS

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a self-aligned contact pad in DRAM manufacture using a damascene process. SOLUTION: A sidewall spacer and an insulating film having a groove defined by this are formed on a semiconductor substrate. ION implantation is carried out to the semiconductor substrate exposed through the groove so that a self- aligned channel area can be formed. A part of the groove is filled with a conductive substance so that a gate electrode recessed from the insulating film can be formed. The remaining part is filled with a substance having an etching selectivity against the insulating film so that a gate capping film can be formed. Thus, the gate electrode is recessed, and the capping insulating film is formed in the recessed part so that the gate electrode can be completely protected by the sidewall spacer and the capping insulating film.