| 摘要 |
PROBLEM TO BE SOLVED: To provide a compact MOSFET for high frequencies whose thermal noise can be reduced by using silicon. SOLUTION: This MOSFET is provided with an element isolation region 3 formed on the main surface of a first conductivity type silicon substrate, a gate electrode 5 arranged on the element isolation region, a first conductivity type impurity region 11 including first conductivity type impurity whose concentration is higher than that of the silicon substrate to which a substrate potential is applied, and a second conductivity type impurity region 6 including the first conductivity type impurity whose concentration is higher than that of the silicon substrate formed in a region ranging from the substrate under the element isolation region to the first conductivity type impurity region.
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