| 发明名称 |
FIELD EFFECT TRANSISTOR AND INTEGRATED LOGIC CIRCUIT USING THE SAME |
| 摘要 |
PROBLEM TO BE SOLVED: To make the hole mobility in a pMOSFET larger than that in a strained Si-MOSFET, to simplify the design of a CMOS logic circuit, and to improve the operating speed of the CMOS logic circuit. SOLUTION: This is an MOSFET whose channel is provided with tension strained SIGe.
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| 申请公布号 |
JP2001291864(A) |
申请公布日期 |
2001.10.19 |
| 申请号 |
JP20000106856 |
申请日期 |
2000.04.07 |
| 申请人 |
TOSHIBA CORP |
发明人 |
TEZUKA TSUTOMU;MIZUNO TOMOHISA;TAKAGI SHINICHI;SUGIYAMA NAOHARU;USUDA KOJI;HATAKEYAMA TETSUO |
| 分类号 |
H01L21/28;H01L21/8238;H01L27/092;H01L29/165;H01L29/78;H01L29/786;(IPC1-7):H01L29/78;H01L21/823 |
主分类号 |
H01L21/28 |
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