| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for extracting a statistical model parameter for quickly and precisely extracting the model parameter of a BSIM 3 from the measured data of the saturation currents and threshold of an MOS. SOLUTION: In a method for extracting the value of the model parameter of an MOS device to be used at the time of operating circuit simulation, a model parameter extracted from the Vds-Ids, Vgs-Ids characteristics of one specific device is used as a base, and a statistical model parameter related with a process indicating the oxide film thickness of the MOS, the doze quantity of a channel, short channel effect reduction infra doze quantity, channel length, and channel width is extracted from the measured data of only the saturation currents and threshold of the other MOS.
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