| 摘要 |
PROBLEM TO BE SOLVED: To easily realize the fusing of a fuse by current supply while sharply reducing the increase of a chip area. SOLUTION: A fuse F constituted of a conductive layer (for example, a multi-crystal silicon layer) is arranged in a circuit 2 formed on a semiconductor substrate, and currents are supplied to the fuse F so that the fuse F can be fused, and that the characteristics or constitution of the circuit 2 can be changed in this semiconductor device. In this case, a capacitor C for discharging a charging charge so that the charging charge can flow in the fuse F at the time of fusing the fuse F is connected in parallel to the fuse F. The fuse F is connected to the by-pass path of currents flowing through a prescribed element (resistances R1 and R2) in the circuit 2, and the by-pass path is interrupted by the fusing.
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