发明名称 DEPOSITED FILM FORMING METHOD AND DEPOSITED FILM FORMING EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To attain a deposited film forming equipment causing neither infiltration of plasma into the position between a power application electrode disposed on a foundation member and the foundation member in a vacuum chamber nor occurrence of abnormal discharge. SOLUTION: A power application electrode 101 disposed on a foundation member 102 is held in a vacuum chamber, and a substrate which doubles as an electrode is introduced into the vacuum chamber in a manner to be opposed to the electrode 101. The end of the electrode 101 is pushed on the member 102 side by means of an insulating clamping member 103, and an insulating spacer 104 is held between the electrode 101 and the member 102. By this method, the electrode 101 can be fixed on the member 102 while maintaining the insulating property of the electrode 101 with respect to the member 102, and the deformation of the electrode 101 can be prevented. As a result, the occurrence of abnormal discharge as well as the infiltration of plasma between the electrode 101 and the member 102 can be suppressed.
申请公布号 JP2001288575(A) 申请公布日期 2001.10.19
申请号 JP20010023702 申请日期 2001.01.31
申请人 CANON INC 发明人 YAJIMA TAKAHIRO;SHISHIDO KENJI;KANAI MASAHIRO
分类号 H05H1/46;C23C16/509;C23C16/54;H01J37/32;H01L21/205;H01L31/04;H01L31/18 主分类号 H05H1/46
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