INTERCONNECTION TO COPPER INTEGRATED CIRCUIT

摘要

PURPOSE: An interconnection to copper integrated circuit is provided to solve copper migration problem that is compatible with, and effective for, both interconnect strategies. CONSTITUTION: A first layer is deposited on selected portions of the semiconductor integrated circuit. The first layer is of a material selected from the group consisting of titanium and chromium. A second layer comprising nickel on the first layer is deposited. A third layer comprising aluminum on the second layer is deposited. The first, second, and third layers are etched to form a bond pad. A conductive wire interconnection is bonded to the third layer.