| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern, with which the reciprocal problem between the resolution and the depth of focus can be solved and a microresist pattern be accurately formed at a sufficiently practical depth of focus than a line width which is sufficient to obtain the depth of focus. SOLUTION: A resist pattern 2b with a line width larger than the desired line width is exposed entirely at the quantity of film penetration exposure (e), and after it is heated (f), a soluble part 2c by a developer is developed for five seconds (g) and then it is dissolved and removed, and then a resist pattern 2a with a desired line width is obtained. |
