| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of reducing an increase in boron concentration (called boron spikes) in a part of an insulating layer containing silicon, boron, and other elements where the insulating layer interfaces with the surface of a semiconductor device. SOLUTION: This method includes a step of seasoning a reaction chamber by flowing into it a mixture of gases containing silicon, boron, ozone, and other elements in predetermined proportions under set conditions of time, pressure, temperature, and flow rates to deposit on inner walls and surfaces of the chamber a thin seasoning coating, and another step of placing a semiconductor device in the chamber and convering it with an insulating layer having a composition similar to the seasoning coating. Subsequent etching of selected portions of the insulating layer has been found not to expose conductive surfaces of the device.
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