SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device provided with a dynamic type RAM realizing securement of operation margin and high speed in a low voltage state. SOLUTION: This device is provided with a sense amplifier comprising of latch circuits having one pair of input/output node corresponding to a first pair of bit line to which plural dynamic type memory cells are connected and composed of a first conduction type MOSFET in which first voltage is given to a source and a second conduction type MOSFET in which second voltage is given to a source, and one pair of a first conduction type switch MOSFET receiving a selection signal and connecting selectively a pair of input/output node of the plural latch circuits and a second pair of bit line provided commonly for the plural first bit lines, and an absolute value of threshold voltage of the switch MOSFET is made lower than that of threshold voltage of the first conduction type MOSFET constituting the latch circuit, and an absolute value of a level of a selection signal making the switch MOSFET an off-state is made higher than that of the first voltage based on the second voltage as a reference.