| 摘要 |
PROBLEM TO BE SOLVED: To prevent the generation of any white spot by suppressing any damage on a light receiving part 3 or the intrusion of any foreign matter into the lower part of the light receiving part 3, due to ashing for removing a photo- resist film 40 used as a mask at the time of impurity ion implantation for forming a source 32 and a drain 33 of a MOS transistor constituting an output part 30, in a CCD solid-state image pickup element in which a reflection preventing film 12 is formed on the light receiving part 3 so that sensitivity can be improved. SOLUTION: A process to form a reflection preventing film 12 on a semiconductor substrate 1 on which a silicon oxide film 7-1 covering the whole surface, a transfer electrode 8, and a silicon oxide film 7-2 coating the transfer electrode 8 are formed is operated prior to the process to form a source 32 and a drain 33 of an output transistor constituting an output part 30 by ion implantation. Also, after the whole surface formation of a reflection preventing member film 12a, the ion implantation can be performed before the formation of the reflection preventing film 12 by selective etching.
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