| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for protection against static electricity which can be refined more. SOLUTION: This semiconductor device for protection against static electricity contains a P type well 11 containing a P type impurity diffusion layer 90, and an N type impurity diffusion layer 20, and an N type well 13 which is formed in the P type well 11, and contains a P type impurity diffusion layer 30 and an N type impurity diffusion layer 40. Furthermore, a first bipolar transistor 210 is constituted by the P type impurity diffusion layer 30, the N type well 13 and the P type well 11, a second bipolar transistor 220 is constituted by the N type impurity diffusion layer 20, the P type well 11 and the N type well 13, and a Zener diode 230 is constituted by an N type impurity diffusion layer 50, and a P type impurity diffusion layer 60 formed on a bottom face of the N type impurity diffusion layer 50. |
