发明名称 POSITIVE PHOTORESIST COMPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a positive photoresist composition having satisfactory sensitivity and resolving power and excellent in PED stability in the formation of a contact hole pattern in the production of a semiconductor device. SOLUTION: The positive photoresist composition contains a resin containing specified silicon-containing repeating units and repeating units each having a specified acid decomposable group and having solubility in an alkali developing solution increased by the action of an acid and a compound which generates the acid when irradiation with active light or radiation.
申请公布号 JP2001290273(A) 申请公布日期 2001.10.19
申请号 JP20000106810 申请日期 2000.04.07
申请人 FUJI PHOTO FILM CO LTD 发明人 SATO KENICHIRO
分类号 G03F7/039;C08F220/26;C08F222/00;C08F230/08;C08F232/00;C08K5/00;C08L35/00;C08L43/04;C08L101/06;G03F7/075;H01L21/027 主分类号 G03F7/039
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