发明名称 |
POSITIVE PHOTORESIST COMPOSITION |
摘要 |
PROBLEM TO BE SOLVED: To provide a positive photoresist composition having satisfactory sensitivity and resolving power and excellent in PED stability in the formation of a contact hole pattern in the production of a semiconductor device. SOLUTION: The positive photoresist composition contains a resin containing specified silicon-containing repeating units and repeating units each having a specified acid decomposable group and having solubility in an alkali developing solution increased by the action of an acid and a compound which generates the acid when irradiation with active light or radiation. |
申请公布号 |
JP2001290273(A) |
申请公布日期 |
2001.10.19 |
申请号 |
JP20000106810 |
申请日期 |
2000.04.07 |
申请人 |
FUJI PHOTO FILM CO LTD |
发明人 |
SATO KENICHIRO |
分类号 |
G03F7/039;C08F220/26;C08F222/00;C08F230/08;C08F232/00;C08K5/00;C08L35/00;C08L43/04;C08L101/06;G03F7/075;H01L21/027 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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