| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a thin film for a Hall element, which has high Hall mobilityμH and high product sensitivity (μH.Rs) using a simple method. SOLUTION: This method includes at least a process for depositing a polycrystalline thin film (InSb thin film) of stoichiometric composition for the Hall element on a substrate, and a process for locally heating surfaces of film formed substrates 1a, 1b, 1c, etc., where the polycrystalline thin film is deposited by using a local heater 11 and for conducting heat treatment. A local heating belt region with the heater 11 is moved at a constant relative velocity to the substrates 1a, 1b, 1c, etc., by moving a substrate holder 14. The dimension of the local heating belt region is defined by the dimension of a window 12 of a blind plate (shutter plate) 13.
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