发明名称 MANUFACTURING METHOD OF HOLLOW BEAM APERTURE AND CHARGED PARTICLE BEAM EXPOSURE APPARATUS AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a hollow beam aperture of a great strength, in which a narrow opening can be easily manufactured. SOLUTION: The hollow beam aperture consists of a 3-layered structure: a shielding layer 1, which has a function to shield the beam; a holding layer 3, which has a function to hold the shielding layer 1; and a reinforcing layer 4, which has a function to keep total aperture strength. The holding layer 3 is comprised of a beam passage, which consists of four holes 5, and it has the function to hold a circular beam absorber 2 at the gap 6 between the holes 5. The shielding layer 1 is comprised of a circular hole, which is concentric with the circular beam absorber 7, and between them is a ring band opening 7. By making the holding layer 3 to have a sufficient thickness to hold the circular beam absorber 2, the holding strength of the circular beam absorber 2 can be kept without increasing the depth of the ring band opening 7.
申请公布号 JP2001291482(A) 申请公布日期 2001.10.19
申请号 JP20000108183 申请日期 2000.04.10
申请人 NIKON CORP 发明人 NAKAMURA JUNJI
分类号 G03F7/20;H01J37/09;H01J37/305;H01L21/027;(IPC1-7):H01J37/09 主分类号 G03F7/20
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