| 摘要 |
<p>PROBLEM TO BE SOLVED: To manufacture an element largely exhibiting tunnel magnetoresistance(TMR) effect by precisely controlling thickness, width and length of a cluster layer and properly selecting material. SOLUTION: A magnetoresistance element constituted of a ferromagnetic electrode (A component), a forced layer (F component) or a sensitized layer (D component) and the cluster layer (K component) is formed on an upper surface of an insulating substrate (B component) which is formed of nonmagnetic material by combining MBE method, lithography method, ion etching method, strong external magnetic field and heat treatment. As a result, a magnetoresistance element, whose magnetoresistance(MR) is largely decreased by applying a small external magnetic field is manufactured.</p> |
