发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an end point detecting method capable of stably judging the end point of dry etching for boring a contact hole even if an area occupied by a contact at the bottom of the contact hole is varied depending on registration accuracy in a photoengraving process. SOLUTION: A first insulating film 19 is formed on a semiconductor substrate 18, a conductive layer 22 is formed on the first insulating film 19, a second insulating film 23 different in kind from the first insulating film 19 is formed on both the conductive layer 22 and the first insulating film 19, a third insulating film 24 is formed on the second insulating film 23, a mask 25 is formed on the third insulating film 24, and the third insulating film 24 is etched through the mask 25. A contact hole 26 is bored in the third insulating film 24, and the formation end point of the contact hole 26 is detected resting on the second insulating film 23.
申请公布号 JP2001291701(A) 申请公布日期 2001.10.19
申请号 JP20000106268 申请日期 2000.04.07
申请人 MITSUBISHI ELECTRIC CORP 发明人 ODA TAKUJI;YOKOYAMA YUICHI;YONEKURA KAZUMASA
分类号 H01L21/28;H01L21/302;H01L21/3065;H01L21/768;(IPC1-7):H01L21/306 主分类号 H01L21/28
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