| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device constituted of silicon carbide semiconductor forming a storage type channel with high quality by epitaxial growth and etching without using ion implantation method. SOLUTION: A region 3 having p-type conductivity is partially formed in a silicon carbide semiconductor epitaxial layer 2 having n-type conductivity, and then silicon carbide semiconductor epitaxial layers 4 and 5 having n-type conductivity are accumulated on a semiconductor substrate 1 constituted of silicon carbide semiconductor having n-type conductivity in which silicon carbide semiconductor epitaxial layers having n-type conductivity are accumulated. Then, the silicon carbide semiconductor epitaxial layers 4 and 5 having n-type conductivity are partially etched, and a channel 10 constituted of n-type silicon carbide semiconductor epitaxial layers in the laminated structure of metal/ insulating film/semiconductor is formed by using the etched faces.
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