GAS TRANSFER DEVICE OF ATOMIC LAYER EPITAXY SYSTEM USING REMOTE PLASMA

摘要

PURPOSE: A gas transfer device of an atomic layer epitaxy system using remote plasma is provided to prevent particles by supplying a reaction material under a lower temperature. CONSTITUTION: A storage vessel(4) stores a solid source of TaCl5 as a reaction material including Ta, A heating portion(5) is installed at an outer face of the storage vessel(4). The heating portion(5) heats the reaction material to a predetermined temperature and sublimates the reaction material to a reaction gas of TaCl5. A flow rate control portion(6) controls the amount of the generated reaction gas. The first feeding valve portion(23) is used for transmitting the generated reaction gas to a vacuum chamber or a bypass line(P). A flow rate controller(MFC3) is installed at the bypass line. A purge valve portion(27) is used for supplying an inert gas such as N2 or Ar. A flow rate controller(MFC1) is installed at the purge valve portion(27). A flow rate controller(MF2) is used for supplying a gas source of NH3. A plasma generator(7) induces ionization of the gas source. The second feeding valve portion(25) is used for transmitting the ionized gas to the vacuum chamber or the bypass line. A flow rate controller(MFC4) is installed at the bypass line.