| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated device which can ensure a capacitance value necessary for normal operation of a dynamic shift register when an element is micronized, in a semiconductor integrated device having a dynamic shift register. SOLUTION: This integrated device is provided with a semiconductor substrate, a plurality of transistor cells which are formed in a prescribed region of the substrate and contain a first conducting layer having parts turning to plural gate electrodes and plural impurity diffusion regions turning to sources or drains, and a second conducting layer which is connected selectively with the first conducting layer or the plural impurity diffusion regions. A part of the plurality of transistor cells constitute a clocked inverter which inverts and outputs input data on the basis of a clock signal. A gate electrode of at least one transistor cell to which the input data are supplied is connected with a gate electrode of at least one transistor cell which does not constitute a clocked inverter.
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