| 摘要 |
PROBLEM TO BE SOLVED: To provide a static electricity protective element for a semiconductor device which can set a withstand voltage between a drain and a gate of a MOS transistor to be higher than a voltage between a collector and a base wherein a parasitic NPN transistor breaks down, and makes it unnecessary to increase the thickness of a gate insulating film. SOLUTION: Drain of a MOS transistor (30) is connected with an input terminal (32) of a semiconductor device, a source is connected with a power source line (Vss), and a resistor (R1) connecting a gate with the source is used. As a result, the breakdown voltage between the drain and the gate of the MOS transistor (30) can be set to be higher than the voltage between the collector and the base wherein the parasitic NPN transistor of the MOS transistor (30) breaks down, and it is not necessary to increase the thickness of the gate oxide film of the MOS transistor (30). As a result, a constitution area of the MOS transistor (30) can be reduced.
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