| 摘要 |
PROBLEM TO BE SOLVED: To form a defect-free III nitride thin film/insulating film. SOLUTION: A dopant molecular beam is stopped after aIII nitride thin film 52 is grown, a hydrocarbon gas is introduced into an atmosphere instead of it, and an insulating film 53 of III nitride thin film loaded with carbon is formed. Furthermore, a hydrocarbon gas is stopped from being introduced, a dopant molecular beam is generated together with a molecular beam containing III elements to form a nitride thin film 54 on the surface of the insulating film 53. The insulating film 53 is of III nitride thin film structure, so that an interface between the insulating film 53 and the III nitride thin films 52 and 54 is never disordered, and no defect is induced.
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